In contrast to a FET, current flows in a BJT with both electrons and electron holes (the absence of an electron in a space that could be occupied by an electron).Īt the time of its invention, the BJT was a much simpler device to fabricate: it built on diode theory and could effectively be thought of as two back-to-back diodes sharing a p-silicon (positive or hole-rich) doped region for NPN BJTs or an n–silicon (negative or electron-rich) doped region for PNP BJTs. Until the 1970s, the primary active switching device in electronics was the bipolar junction transistor (BJT). NMOS FETs, it is worth describing the underlying shared MOSFET theory. To better understand the intricacies of PMOS vs. Yet it is their combined output that has vastly improved power performance in electronics over the past few decades. NMOS FET technology: which is better? At one time, both offered manufacturing advantages over the other. NMOS dichotomy after decades of refinement How CMOS leverages the advantages of PMOS and NMOS for a superior switching device.ĬMOS technology (shown above in an image sensor) marked the end of the PMOS vs. The early manufacturing difficulties of NMOS and its growth to prominence. The beginning of active switching elements and the transition to PMOS.
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